Wolfspeed Introduces Industry’s First Commercially Available 10,000 V Silicon Carbide Power MOSFET

Revolutionary 10 kV SiC Technology Delivers Game-Changing Solution for Grid Modernization, Industrial Electrification and AI Data Center InfrastructureDURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc., a ...
IEEE

Investigation of the Effect of Bonding Wires Degradation on Switching Stress Waves Released During Power Cycling in Discrete IGBT

Abstract: Effective condition monitoring (CM) technology ensures the safe operation of insulated gate bipolar transistors (IGBTs). Most CM methods for IGBTs focus on extracting electrical, thermal, ...
IEEE

A Wire-Free PCB plus DBC Hybrid SiC MOSFET Power Module with Ultra-Low Parasitic Inductance and Integrated PCB Microtube Cooling

Abstract: Silicon carbide (SiC) power devices offer high switching speeds and power densities but are constrained by significant parasitic inductance and limited thermal dissipation capability.